Comparison between 1.7 kV SiC SJT and MOSFET power modules

Abstract

In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.