Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip

Abstract

This paper presents switching operation of a monolithically integrated half-bridge stage in a 600 V-class GaN-on-Si technology. The integrated power chip includes two high performance GaN-HEMTs with integrated freewheeling Schottky diodes, on a total chip area of 4×4 mm2. Operation of the half-bridge chip is demonstrated in a soft-switching buck converter at switching frequencies up to 3 MHz, input voltages up to 400 V, and output power up to 250 W.