{"title":"用于汽车应用的650V和900V, 150A SiC肖特基二极管","authors":"K. Chatty, Sujit Banerjee, K. Matocha","doi":"10.1109/WIPDA.2016.7799926","DOIUrl":null,"url":null,"abstract":"650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown voltage of 1100V at 250uA and leakage current of 600nA at 900V. A 30% reduction in yield is observed with die size increase from 12A to 150A diode due to the impact of defects on leakage current and breakdown voltage. A reduction in substrate thickness will be key to accelerate the commercial readiness of the 650V and 900V high current diodes due to the die size reduction, yield improvement and cost reduction it enables.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"650V and 900V, 150A SiC Schottky diode for automotive applications\",\"authors\":\"K. Chatty, Sujit Banerjee, K. Matocha\",\"doi\":\"10.1109/WIPDA.2016.7799926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown voltage of 1100V at 250uA and leakage current of 600nA at 900V. A 30% reduction in yield is observed with die size increase from 12A to 150A diode due to the impact of defects on leakage current and breakdown voltage. A reduction in substrate thickness will be key to accelerate the commercial readiness of the 650V and 900V high current diodes due to the die size reduction, yield improvement and cost reduction it enables.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
650V and 900V, 150A SiC Schottky diode for automotive applications
650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown voltage of 1100V at 250uA and leakage current of 600nA at 900V. A 30% reduction in yield is observed with die size increase from 12A to 150A diode due to the impact of defects on leakage current and breakdown voltage. A reduction in substrate thickness will be key to accelerate the commercial readiness of the 650V and 900V high current diodes due to the die size reduction, yield improvement and cost reduction it enables.
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