{"title":"Impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing","authors":"T. Okuda, Takuma Kobayashi, T. Kimoto, J. Suda","doi":"10.1109/WIPDA.2016.7799944","DOIUrl":null,"url":null,"abstract":"We investigate an impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO<inf>2</inf> followed by POCl<inf>3</inf> annealing. The POCl<inf>3</inf> annealing process consists of two steps: (i) thermal annealing in POCl<inf>3</inf> and (ii) subsequent thermal annealing in pure N<inf>2</inf>. We find that the annealing temperature of the subsequent N<inf>2</inf> annealing is important to reduce surface recombination on SiC. For surface passivation, N<inf>2</inf> annealing at high temperature at 1000° C is necessary.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We investigate an impact of annealing temperature on surface passivation of SiC epitaxial layers with deposited SiO2 followed by POCl3 annealing. The POCl3 annealing process consists of two steps: (i) thermal annealing in POCl3 and (ii) subsequent thermal annealing in pure N2. We find that the annealing temperature of the subsequent N2 annealing is important to reduce surface recombination on SiC. For surface passivation, N2 annealing at high temperature at 1000° C is necessary.
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