MHz临界模式功率因数校正电路的功率损耗模型

Yue Zhang, Chengcheng Yao, Xuan Zhang, Huanyu Chen, He Li, Jin Wang
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引用次数: 8

摘要

宽带隙器件(wbg)允许功率因数校正(PFC)电路在MHz频率下工作,从而获得更好的功率密度。与kHz工作相比,临界导通模式(CrM)下的MHz PFC在开关软导通过程中产生更大的电感谷电流。此外,传统模型没有考虑电网电压过零附近的输入电流畸变。因此,传统的PFC设计工具在开关频率、电感电流包络和功率损耗估计方面存在很大的不准确性。本文分析了传统模型存在的问题,提出了一种改进的功率损耗模型,用于MHz CrM pfc的设计,实验结果证明了该模型的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power loss model for MHz critical mode power factor correction circuits
Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional model. As a result, the traditional PFC design tool shows major inaccuracy in switching frequency, inductor current envolopes and power loss estimation. The paper analyzes the problems in the traditional model, and proposes an improved power loss model to aid the design of MHz CrM PFC. Experimental results are shown to prove the accuracy of the proposed model.
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