High current (650V–200A, 1200V–100A) single SiC diodes

Abstract

High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also been fabricated with solderable topside metals for enhanced packaging and were tested with double-sided cooling to quantify the benefits. One primary target application is for direct replacement of Si diodes in EV & HEV traction drives.