SiC技术对三端口有源桥式变换器储能集成固态变压器应用的影响

Zhenyu Wang, A. Castellazzi, Sarah Saeed, Ángel Navarro-Rodríguez, P. García
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引用次数: 9

摘要

碳化硅(SiC) MOSFET功率模块在过去几年中已经商业化,并且在固态变压器(SSTs)应用中取代基于硅(Si)的igbt具有吸引力。本文重点研究了基于SiC mosfet的三端口有源桥式变换器(TAB)和基于Si igbt的三端口有源桥式变换器的效率比较。作为连接储能元件(锂离子电池)的一个端口,整个系统的效率进行了测试和分析。通过交换器件的开关频率,可以观察到SiC功率器件的显着效率提高。实验结果表明,SiC MOSFET可使效率提高约2%。此外,随着开关频率的增加,电池损耗最多可降低8%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of SiC technology in a three-port active bridge converter for energy storage integrated solid state transformer applications
Silicon Carbide (SiC) MOSFET power module has become commercially available in the past few years, and it is attractive in solid state transformers (SSTs) applications to replace Silicon (Si)-based IGBTs. This paper is focused on the efficiency comparison between a SiC MOSFET-based three-port active bridge converter (TAB) and a Si IGBT-based approach. The efficiency of the overall system, being one of its ports connected to the energy storage element (Lithium-Ion battery), is tested and analyzed. By swapping the switching frequency of the device, a significant efficiency improvement can be observed by SiC power devices. Experimental results indicated that an efficiency increment of around 2% can be brought by SiC MOSFET. Moreover, the battery losses can be reduced by a maximum of 8% with the increased switching frequency.
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