Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Yuming Zhou, Y. Li, B. Wang
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引用次数: 6

Abstract

SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.
基于先进迁移率模型的4H-SiC MOSFET Spice建模
基于先进的迁移率模型,对碳化硅MOSFET进行了SPICE建模。本模型采用MOSFET的SPICE 1级模型,但将零碎电流方程中的恒定迁移率替换为先进的迁移率表达式,可以准确反映SiC/SiO2界面陷阱对4H-SiC MOSFET电学特性的影响。根据MOS系统的电荷表模型(CSM)得到了先进迁移模型的关键参数。利用生产数据验证了所开发的4H-SiC MOSFET模型的传输特性,并在Boost变换器中进行了开关特性的实验验证。基于所建立的模型,定量讨论了SiC/SiO2界面阱密度对4H-SiC MOSFET开关特性的影响,揭示了不同界面阱密度下4HSiC MOSFET的合理栅极驱动电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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