Jacob Dyer, Zheyu Zhang, Fred Wang, D. Costinett, L. Tolbert, B. Blalock
{"title":"Online condition monitoring of SiC devices using intelligent gate drive for converter performance improvement","authors":"Jacob Dyer, Zheyu Zhang, Fred Wang, D. Costinett, L. Tolbert, B. Blalock","doi":"10.1109/WIPDA.2016.7799934","DOIUrl":null,"url":null,"abstract":"Many intelligent gate drivers being designed for new state-of-the-art WBG devices typically only focus on protection and driving capabilities of the devices. This paper introduces an intelligent gate driver that incorporates online condition monitoring of the WBG devices. For this specific case study, three timing conditions (turn-off delay time, turn-off time, and voltage commutation time) of a silicon carbide (SiC) device are online monitored. This online monitoring system is achieved through gate driver assist circuits and a micro-controller. These conditions are then utilized to develop converter-level benefits for the converter application the SiC devices are placed in. Junction temperature monitoring is realized through turn-off delay time monitoring. Dead-time optimization is achieved with turn-off time monitoring. Dead-time compensation is obtained with turn-off time and voltage commutation time monitoring. The case study converter assembled for testing purposes is a half-bridge inverter using two SiC devices in a phase-leg configuration. All timing conditions are correctly monitored within reasonable difference of the actual condition time. A calibration curve was created to give a direct relationship between turn-off delay time and junction temperature. The half-bridge inverter can operate at 600 Vdc input and successfully obtain a junction temperature measurement through monitored td_off and the calibration curve. Furthermore, the proposed online condition monitoring system is transistor based and suitable for the chip level integration, enabling this practical approach to be cost-effective for end users.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Many intelligent gate drivers being designed for new state-of-the-art WBG devices typically only focus on protection and driving capabilities of the devices. This paper introduces an intelligent gate driver that incorporates online condition monitoring of the WBG devices. For this specific case study, three timing conditions (turn-off delay time, turn-off time, and voltage commutation time) of a silicon carbide (SiC) device are online monitored. This online monitoring system is achieved through gate driver assist circuits and a micro-controller. These conditions are then utilized to develop converter-level benefits for the converter application the SiC devices are placed in. Junction temperature monitoring is realized through turn-off delay time monitoring. Dead-time optimization is achieved with turn-off time monitoring. Dead-time compensation is obtained with turn-off time and voltage commutation time monitoring. The case study converter assembled for testing purposes is a half-bridge inverter using two SiC devices in a phase-leg configuration. All timing conditions are correctly monitored within reasonable difference of the actual condition time. A calibration curve was created to give a direct relationship between turn-off delay time and junction temperature. The half-bridge inverter can operate at 600 Vdc input and successfully obtain a junction temperature measurement through monitored td_off and the calibration curve. Furthermore, the proposed online condition monitoring system is transistor based and suitable for the chip level integration, enabling this practical approach to be cost-effective for end users.