T. Okuda, Yohei Nakamura, T. Hikihara, Michihiro Shintani, Takashi Sato
{"title":"基于表面电位模型的SiC功率mosfet暂态行为分析及其在升压变换器中的应用","authors":"T. Okuda, Yohei Nakamura, T. Hikihara, Michihiro Shintani, Takashi Sato","doi":"10.1109/WIPDA.2016.7799917","DOIUrl":null,"url":null,"abstract":"A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests that the proposed device model based on surface potential is applicable to design high-frequency power converters.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"267 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter\",\"authors\":\"T. Okuda, Yohei Nakamura, T. Hikihara, Michihiro Shintani, Takashi Sato\",\"doi\":\"10.1109/WIPDA.2016.7799917\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests that the proposed device model based on surface potential is applicable to design high-frequency power converters.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"267 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7799917\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter
A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests that the proposed device model based on surface potential is applicable to design high-frequency power converters.
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