A circuit simulation model for V-groove SiC power MOSFET

Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato
{"title":"A circuit simulation model for V-groove SiC power MOSFET","authors":"Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato","doi":"10.1109/WIPDA.2016.7799954","DOIUrl":null,"url":null,"abstract":"In this paper, a novel circuit simulation model for V-groove SiC power MOSFET with buried P-layers is proposed. By considering the structure of the MOSFET, bias dependence of on-resistance and the kink in the terminal capacitance are represented in the proposed model. Through experiments using a V-groove SiC MOSFET, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7799954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this paper, a novel circuit simulation model for V-groove SiC power MOSFET with buried P-layers is proposed. By considering the structure of the MOSFET, bias dependence of on-resistance and the kink in the terminal capacitance are represented in the proposed model. Through experiments using a V-groove SiC MOSFET, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics.
v型沟槽SiC功率MOSFET电路仿真模型
本文提出了一种新型的埋p层v型沟槽SiC功率MOSFET电路仿真模型。该模型考虑了MOSFET的结构,考虑了导通电阻的偏置依赖性和端电容的扭转。通过v型沟槽SiC MOSFET的实验表明,该模型成功地再现了I-V和C-V特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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