Analysis of transient behavior of SiC power MOSFETs based on surface potential model and its application to boost converter

Abstract

A DC-DC boost converter is fabricated using a SiC MOSFET and the characteristics are analyzed with SPICE simulation. We use a device model based on surface potential for SiC MOSFET, which was proposed this year by our group. It is found that the SPICE simulation well explains the experimental waveforms of the fabricated boost converter even at very high frequencies of 1–5 MHz. This result suggests that the proposed device model based on surface potential is applicable to design high-frequency power converters.