{"title":"基于先进迁移率模型的4H-SiC MOSFET Spice建模","authors":"Yuming Zhou, Y. Li, B. Wang","doi":"10.1109/WIPDA.2016.7887813","DOIUrl":null,"url":null,"abstract":"SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.","PeriodicalId":431347,"journal":{"name":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Spice modeling of 4H-SiC MOSFET based on the advanced mobility model\",\"authors\":\"Yuming Zhou, Y. Li, B. Wang\",\"doi\":\"10.1109/WIPDA.2016.7887813\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.\",\"PeriodicalId\":431347,\"journal\":{\"name\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WIPDA.2016.7887813\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2016.7887813","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Spice modeling of 4H-SiC MOSFET based on the advanced mobility model
SPICE modeling of silicon carbide (SiC) MOSFET based on the advanced mobility model has been carried out. This modeling employs the SPICE level-1 model of MOSFET, but the constant mobility in the piecewise current equations has been replaced by the advanced mobility expressions, which can exactly reflect the effect of SiC/SiO2 interface traps on the electrical characteristics of 4H-SiC MOSFET. Key parameters in this advanced mobility model are obtained according to charge-sheet model (CSM) of MOS system. The transfer characteristics of the developed 4H-SiC MOSFET model have been validated with the production Datasheet, the switching characteristics have been experimentally verified in Boost converter. Based on the developed model, the effect of SiC/SiO2 interface-trap densities on the switching characteristics of 4H-SiC MOSFET has been quantitatively discussed, reasonable gate driving voltage of 4HSiC MOSFET with different interface-trap densities has been revealed.
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