v型沟槽SiC功率MOSFET电路仿真模型

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Pub Date : 2016-11-01 DOI:10.1109/WIPDA.2016.7799954

Michihiro Shintani, Kazuki Oishi, R. Zhou, Masayuki Hiromoto, Takashi Sato

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引用次数: 4

摘要

本文提出了一种新型的埋p层v型沟槽SiC功率MOSFET电路仿真模型。该模型考虑了MOSFET的结构，考虑了导通电阻的偏置依赖性和端电容的扭转。通过v型沟槽SiC MOSFET的实验表明，该模型成功地再现了I-V和C-V特性。

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A circuit simulation model for V-groove SiC power MOSFET

In this paper, a novel circuit simulation model for V-groove SiC power MOSFET with buried P-layers is proposed. By considering the structure of the MOSFET, bias dependence of on-resistance and the kink in the terminal capacitance are represented in the proposed model. Through experiments using a V-groove SiC MOSFET, it is demonstrated that the proposed model successfully reproduces both I-V and C-V characteristics.

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来源期刊

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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