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Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths 具有超短通道长度的垂直MOS晶体管的先进自对准SOI概念
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194507
T. Aeugle, L. Risch, W. Rosner, T. Schulz, D. Behammer
{"title":"Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths","authors":"T. Aeugle, L. Risch, W. Rosner, T. Schulz, D. Behammer","doi":"10.1109/ESSDERC.1997.194507","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194507","url":null,"abstract":"have to demonstrate prtJ'Qu,r:tiG,n SOl can solve seems to be very tnt.�re,uil1!g lU'-appu(�atlons like mobile communication","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127661404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Voltage controlled colour separation in two-terminal a-Si:H based sensor structures
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194523
T. Neidlinger, R. Bruggemann, H. Brummack, M. Schubert
{"title":"Voltage controlled colour separation in two-terminal a-Si:H based sensor structures","authors":"T. Neidlinger, R. Bruggemann, H. Brummack, M. Schubert","doi":"10.1109/ESSDERC.1997.194523","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194523","url":null,"abstract":"Various arrangements of stacked thin film photodiodes are capable of generating colour signals from two-terminal devices in a sequential manner with a properly cycled sequence of read-out voltages. We report on the performance and internal limitations of different amorphous silicon based n-i-p-i-n or p-i-i-n sensor structures. For the latter, the band gap varies during the course of deposition of the intrinsic layers. The full benefit of this type of sensors unfolds in conjunction with the advantage of the speed, flexibility, maturity, and cost-effectiveness of modern application-specific integrated circuits in Thin-Film on ASIC systems.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122275869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the effect of the extension implant energy on deep submicron CMOS device performance 延伸植入能量对深亚微米CMOS器件性能影响的研究
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194448
S. Kubicek, S. Biesemans, K. De Meyer
{"title":"Investigation of the effect of the extension implant energy on deep submicron CMOS device performance","authors":"S. Kubicek, S. Biesemans, K. De Meyer","doi":"10.1109/ESSDERC.1997.194448","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194448","url":null,"abstract":"Bulk nMOS and pMOS transistors with nominal poly length down to 0.10 μm and minimum effective channel length below 0.1 μm were fabricated. An optimised channel doping by indium and antimony is used to suppress the short channel effect (SCE). The influence of the implant energy, ranging from 3 to 15 KeV, of BF2 and Arsenic S/D shallow extensions on the device performance is investigated. Below a critical energy of 5 KeV, speed performance degrades significantly.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"59 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116522319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs 导致二维mesfet导态击穿的寄生双极效应
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194531
G. Meneghesso, A. Neviani, M. Pavesi, M. Hurt, W. Peatman, M. Shur, C. Canali, E. Zanoni
{"title":"Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs","authors":"G. Meneghesso, A. Neviani, M. Pavesi, M. Hurt, W. Peatman, M. Shur, C. Canali, E. Zanoni","doi":"10.1109/ESSDERC.1997.194531","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194531","url":null,"abstract":"In this work we have studied and characterized the impact-ionization-induced instabilities in the output characteristics of two-dimensional MESFET s. The instabilities appear as an increase of the output conductance, gD. By performing a complete set of DC measurements at different temperature and electroluminescence measurements, in different bias conditions, we were able to correlate the kinks in the output characteristics with different impact ionization regimes, including the possible onset of a parasitic bipolar effect.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"205 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116374737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Building in reliability with latch-up, ESD and hot carrier effects on a 0.25 um CMOS technology 利用锁存器、ESD和热载子效应在0.25 um CMOS技术上建立可靠性
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194466
C. Leroux, P. Salomé, G. Reimbold, D. Blachier, G. Guégan, M. Bonis
{"title":"Building in reliability with latch-up, ESD and hot carrier effects on a 0.25 um CMOS technology","authors":"C. Leroux, P. Salomé, G. Reimbold, D. Blachier, G. Guégan, M. Bonis","doi":"10.1109/ESSDERC.1997.194466","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194466","url":null,"abstract":"In this study, three major reliability aspects, hot carrier effects, latchup and Electrostatic Discharge (ESD) have been simultaneously studied on a 0.25 μm CMOS technology. For this purpose, three source-drain architectures processed on different kinds of substrate were compared with respect to these three reliability aspects. This work clearly demonstrates the dependence existing between them. The source-drain architecture affects of course the hot carrier reliability but also the ESD performances. A thinner epitaxial substrate is effective to reduce latch-up occurrence, but degrades the ESD failure threshold.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124063569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low-Noise Amplifier for Mobile Communications using a Production Ready SiGe HBT Technology 采用生产就绪SiGe HBT技术的移动通信低噪声放大器
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194438
U. Erben, A. Schuppen, H. Dietrich, H. Schumacher
{"title":"Low-Noise Amplifier for Mobile Communications using a Production Ready SiGe HBT Technology","authors":"U. Erben, A. Schuppen, H. Dietrich, H. Schumacher","doi":"10.1109/ESSDERC.1997.194438","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194438","url":null,"abstract":"A production ready SiGe HBT technology was used to realize a stage GHz low noise ampli er This ampli er exhibits a minimum noise gure of dB with up to dB associated gain at a supply voltage of V and a current of mA Input and output matching can be obtained by using bond wire inductances The third order input intercept point was observed at dBm","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124198807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Periodic Transconductance Oscillations in Sub-100nm MOSFETs 亚100nm mosfet的周期性跨导振荡
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194445
G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser
{"title":"Periodic Transconductance Oscillations in Sub-100nm MOSFETs","authors":"G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser","doi":"10.1109/ESSDERC.1997.194445","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194445","url":null,"abstract":"In this paper the low temperature (4.2 ≤ T ≤ 35 K) behaviour of MOSFET’s with channel lengths down to 30 nm is analysed. Unexpected periodic transconductance oscillations are found in the drain current (Id) versus gate voltage (Vg) characteristics. Transconductance oscillations are present both for pMOS and nMOS devices. The drain current versus drain voltage characteristics of nMOSFET’s indicates anomalous conductance fluctuations, too.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130765574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Excitonic Scattering on Charge Carrier Ambipolar Diffusion in Silicon 激子散射对硅中载流子双极性扩散的影响
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194403
E. Velmre, A. Udal
{"title":"Influence of Excitonic Scattering on Charge Carrier Ambipolar Diffusion in Silicon","authors":"E. Velmre, A. Udal","doi":"10.1109/ESSDERC.1997.194403","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194403","url":null,"abstract":"Calculation of drift mobilities and the ambipolar diffusion coefficient dependences versus free electron and hole concentrations in low and medium doped silicon have been performed and compared to experimental results in order to evaluate the influence of excitonic scattering on charge carrier transport in silicon at room temperature. Our analysis shows that in contrast to electron-hole scattering the excitonic scattering may be an important factor to explane the experimentally observed ambipolar diffusion coefficient reduction at higher free carrier densities.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131167748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Physically Based Substrate Current Simulation 基于物理的衬底电流模拟
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194399
M. Knaipp, T. Grasser, S. Selberherr
{"title":"A Physically Based Substrate Current Simulation","authors":"M. Knaipp, T. Grasser, S. Selberherr","doi":"10.1109/ESSDERC.1997.194399","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194399","url":null,"abstract":"A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier concentration is calculated. This is in contrast to most used models were the generation rate is proportional to the particle flux density.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132585133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
New Designs, Readout Concept and Simulation Approach of Micromachined Rate Gyroscopes 微机械速率陀螺仪的新设计、读出概念和仿真方法
27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI: 10.1109/ESSDERC.1997.194457
W. Geiger, B. Folkmer, H. Sandmaier, W. Lang
{"title":"New Designs, Readout Concept and Simulation Approach of Micromachined Rate Gyroscopes","authors":"W. Geiger, B. Folkmer, H. Sandmaier, W. Lang","doi":"10.1109/ESSDERC.1997.194457","DOIUrl":"https://doi.org/10.1109/ESSDERC.1997.194457","url":null,"abstract":"This paper reports on new vibrating comb-drive rate gyroscope designs featuring decoupling of the actuation and the detection mode. Analytical calculations as well as FEM and system simulations are carried out. It is investigated how to overcome the main drawbacks of these sensors which are especially the frequency mis­ match of the two oscillation modes, the insufficient bandwidth and the effects of levitation. Concepts and simulations of electrostatically controlling both the resonance frequency and the bandwidth are presented. Within these concepts no mechanical balancing of the device is required and thus calibration costs are reduced. Simulations of a new quasi-rotating rate gyroscope show, that a resolution of 0.1 °ls is possible at a bandwidth of 50 Hz with 6 rnrn sensor area only and that the effects of levitation are actually compensated.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124041778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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