A Physically Based Substrate Current Simulation

Abstract

A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier concentration is calculated. This is in contrast to most used models were the generation rate is proportional to the particle flux density.