{"title":"延伸植入能量对深亚微米CMOS器件性能影响的研究","authors":"S. Kubicek, S. Biesemans, K. De Meyer","doi":"10.1109/ESSDERC.1997.194448","DOIUrl":null,"url":null,"abstract":"Bulk nMOS and pMOS transistors with nominal poly length down to 0.10 μm and minimum effective channel length below 0.1 μm were fabricated. An optimised channel doping by indium and antimony is used to suppress the short channel effect (SCE). The influence of the implant energy, ranging from 3 to 15 KeV, of BF2 and Arsenic S/D shallow extensions on the device performance is investigated. Below a critical energy of 5 KeV, speed performance degrades significantly.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"59 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the effect of the extension implant energy on deep submicron CMOS device performance\",\"authors\":\"S. Kubicek, S. Biesemans, K. De Meyer\",\"doi\":\"10.1109/ESSDERC.1997.194448\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bulk nMOS and pMOS transistors with nominal poly length down to 0.10 μm and minimum effective channel length below 0.1 μm were fabricated. An optimised channel doping by indium and antimony is used to suppress the short channel effect (SCE). The influence of the implant energy, ranging from 3 to 15 KeV, of BF2 and Arsenic S/D shallow extensions on the device performance is investigated. Below a critical energy of 5 KeV, speed performance degrades significantly.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"59 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194448\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194448","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of the effect of the extension implant energy on deep submicron CMOS device performance
Bulk nMOS and pMOS transistors with nominal poly length down to 0.10 μm and minimum effective channel length below 0.1 μm were fabricated. An optimised channel doping by indium and antimony is used to suppress the short channel effect (SCE). The influence of the implant energy, ranging from 3 to 15 KeV, of BF2 and Arsenic S/D shallow extensions on the device performance is investigated. Below a critical energy of 5 KeV, speed performance degrades significantly.
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