{"title":"基于物理的衬底电流模拟","authors":"M. Knaipp, T. Grasser, S. Selberherr","doi":"10.1109/ESSDERC.1997.194399","DOIUrl":null,"url":null,"abstract":"A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier concentration is calculated. This is in contrast to most used models were the generation rate is proportional to the particle flux density.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Physically Based Substrate Current Simulation\",\"authors\":\"M. Knaipp, T. Grasser, S. Selberherr\",\"doi\":\"10.1109/ESSDERC.1997.194399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier concentration is calculated. This is in contrast to most used models were the generation rate is proportional to the particle flux density.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Drift-Diffusion (DD) simulation is compared with a hydrodynamic (HD) simulation. The used device is a submicron n-channel MOSFET. The current density distribution in the area of maximal generation is calculated. The influence of a surface reduced impact generation rate model is discussed. Finally a generation rate which is proportional to the carrier concentration is calculated. This is in contrast to most used models were the generation rate is proportional to the particle flux density.
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