亚100nm mosfet的周期性跨导振荡

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194445

G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser

{"title":"亚100nm mosfet的周期性跨导振荡","authors":"G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser","doi":"10.1109/ESSDERC.1997.194445","DOIUrl":null,"url":null,"abstract":"In this paper the low temperature (4.2 ≤ T ≤ 35 K) behaviour of MOSFET’s with channel lengths down to 30 nm is analysed. Unexpected periodic transconductance oscillations are found in the drain current (Id) versus gate voltage (Vg) characteristics. Transconductance oscillations are present both for pMOS and nMOS devices. The drain current versus drain voltage characteristics of nMOSFET’s indicates anomalous conductance fluctuations, too.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Periodic Transconductance Oscillations in Sub-100nm MOSFETs\",\"authors\":\"G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser\",\"doi\":\"10.1109/ESSDERC.1997.194445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the low temperature (4.2 ≤ T ≤ 35 K) behaviour of MOSFET’s with channel lengths down to 30 nm is analysed. Unexpected periodic transconductance oscillations are found in the drain current (Id) versus gate voltage (Vg) characteristics. Transconductance oscillations are present both for pMOS and nMOS devices. The drain current versus drain voltage characteristics of nMOSFET’s indicates anomalous conductance fluctuations, too.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文分析了沟道长度低至30nm的MOSFET的低温(4.2≤T≤35k)性能。在漏极电流(Id)与栅极电压(Vg)特性中发现了意想不到的周期性跨导振荡。pMOS和nMOS器件都存在跨导振荡。nMOSFET的漏极电流与漏极电压特性也表明了异常的电导波动。

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Periodic Transconductance Oscillations in Sub-100nm MOSFETs

In this paper the low temperature (4.2 ≤ T ≤ 35 K) behaviour of MOSFET’s with channel lengths down to 30 nm is analysed. Unexpected periodic transconductance oscillations are found in the drain current (Id) versus gate voltage (Vg) characteristics. Transconductance oscillations are present both for pMOS and nMOS devices. The drain current versus drain voltage characteristics of nMOSFET’s indicates anomalous conductance fluctuations, too.

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27th European Solid-State Device Research Conference

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