Investigation of the effect of the extension implant energy on deep submicron CMOS device performance

Abstract

Bulk nMOS and pMOS transistors with nominal poly length down to 0.10 μm and minimum effective channel length below 0.1 μm were fabricated. An optimised channel doping by indium and antimony is used to suppress the short channel effect (SCE). The influence of the implant energy, ranging from 3 to 15 KeV, of BF2 and Arsenic S/D shallow extensions on the device performance is investigated. Below a critical energy of 5 KeV, speed performance degrades significantly.