{"title":"激子散射对硅中载流子双极性扩散的影响","authors":"E. Velmre, A. Udal","doi":"10.1109/ESSDERC.1997.194403","DOIUrl":null,"url":null,"abstract":"Calculation of drift mobilities and the ambipolar diffusion coefficient dependences versus free electron and hole concentrations in low and medium doped silicon have been performed and compared to experimental results in order to evaluate the influence of excitonic scattering on charge carrier transport in silicon at room temperature. Our analysis shows that in contrast to electron-hole scattering the excitonic scattering may be an important factor to explane the experimentally observed ambipolar diffusion coefficient reduction at higher free carrier densities.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of Excitonic Scattering on Charge Carrier Ambipolar Diffusion in Silicon\",\"authors\":\"E. Velmre, A. Udal\",\"doi\":\"10.1109/ESSDERC.1997.194403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Calculation of drift mobilities and the ambipolar diffusion coefficient dependences versus free electron and hole concentrations in low and medium doped silicon have been performed and compared to experimental results in order to evaluate the influence of excitonic scattering on charge carrier transport in silicon at room temperature. Our analysis shows that in contrast to electron-hole scattering the excitonic scattering may be an important factor to explane the experimentally observed ambipolar diffusion coefficient reduction at higher free carrier densities.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194403\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of Excitonic Scattering on Charge Carrier Ambipolar Diffusion in Silicon
Calculation of drift mobilities and the ambipolar diffusion coefficient dependences versus free electron and hole concentrations in low and medium doped silicon have been performed and compared to experimental results in order to evaluate the influence of excitonic scattering on charge carrier transport in silicon at room temperature. Our analysis shows that in contrast to electron-hole scattering the excitonic scattering may be an important factor to explane the experimentally observed ambipolar diffusion coefficient reduction at higher free carrier densities.
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