Low-Noise Amplifier for Mobile Communications using a Production Ready SiGe HBT Technology

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194438

U. Erben, A. Schuppen, H. Dietrich, H. Schumacher

引用次数: 1

Abstract

A production ready SiGe HBT technology was used to realize a stage GHz low noise ampli er This ampli er exhibits a minimum noise gure of dB with up to dB associated gain at a supply voltage of V and a current of mA Input and output matching can be obtained by using bond wire inductances The third order input intercept point was observed at dBm

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采用生产就绪SiGe HBT技术的移动通信低噪声放大器

采用可量产的SiGe HBT技术实现了一种级GHz低噪声放大器，该放大器在电源电压为V、电流为mA时，噪声最小为dB，相关增益高达dB，利用键合线电感可实现输入输出匹配，三阶输入截距点为dBm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

27th European Solid-State Device Research Conference

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