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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995最新文献

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SiGe devices and circuits: where are advantages over III/V ? SiGe器件和电路:与III/V相比优势在哪里?
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528952
U. Konig, A. Gruhle, A. Schuppen
{"title":"SiGe devices and circuits: where are advantages over III/V ?","authors":"U. Konig, A. Gruhle, A. Schuppen","doi":"10.1109/GAAS.1995.528952","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528952","url":null,"abstract":"SiGe devices are just on an upswing due to their compatibility with existing silicon technologies. Outstanding SiGe ICs manufactured at high integration levels, high volume and low cost are envisaged. Concerning frequency they will fill the gap between standard Si and III/V. In some aspects like low-frequency and high-frequency noise, and low power consumption SiGe hetero bipolar transistors (HBTs) are advantageous over III/V-HBTs and approach the performance of some high electron mobility transistors (HEMTS), at least below 10 GHz. The paper reviews state of the art and potential of electronic SiGe heterodevices and tries a comparison to respective III/V devices.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115734533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems 采用InP/InGaAs双异质结构双极晶体管技术实现的光/微波相互作用系统单片集成光接收器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528990
H. Kamitsuna, Y. Matsuoka, S. Yamahata, K. Kurishima
{"title":"A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems","authors":"H. Kamitsuna, Y. Matsuoka, S. Yamahata, K. Kurishima","doi":"10.1109/GAAS.1995.528990","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528990","url":null,"abstract":"This paper presents, for the first time, a monolithically integrated long-wavelength photoreceiver that uses InP/InGaAs double-heterostructure bipolar transistors (DHBT's) and layer- and process-compatible three-terminal double-heterostructure phototransistors (DHPT's) for band-limited optical/microwave interaction systems. The developed DHPT/DHBT photoreceiver yields the very large photo-response of 6.3 A/W at 15.3 GHz due to the utilization of the opto-microwave compatible DHPT/DHBT combination and an inductor attached at the base terminal of the DHPT. The entire DHPT/DHBT photoreceiver, including the O/E conversion part, is designed using conventional MMIC design techniques, and good design accuracy is confirmed.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123859846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers 高PAE伪晶InGaAs/AlGaAs HEMT x波段高功率放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529011
Y.C. Chen, C.S. Wu, C. Pao, M. Cole, Z. Bardai, L. Hou, T.A. Midford, T. Cisco
{"title":"High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers","authors":"Y.C. Chen, C.S. Wu, C. Pao, M. Cole, Z. Bardai, L. Hou, T.A. Midford, T. Cisco","doi":"10.1109/GAAS.1995.529011","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529011","url":null,"abstract":"A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered such that the device breakdown voltage was optimized without sacrificing gain and efficiency. A two-stage high power X-band monolithic amplifier based on the optimized device has been developed. When the amplifier was operated at V/sub ds/=10 V, an output power of 9 W was achieved across the 7 to 10 GHz frequency range. A peak saturated output power of 10 W, corresponding to a power density of 1 W/mm, occurred at 8.5 GHz. When biased at 7 V, the amplifier generated a peak power of 6.7 W with an associated power added efficiency of 40% at 8.5 GHz.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128769731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs 用于高速数字、模拟、混合信号和光电子集成电路的基于inp的HBT晶圆厂
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528954
W. Stanchina, J. Jensen, R. Walden, M. Hafizi, H. Sun, T. Liu, C. Raghavan, K. Elliott, M. Kardos, A. Schmitz, Y. Brown, M. Montes, M. Yung
{"title":"An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs","authors":"W. Stanchina, J. Jensen, R. Walden, M. Hafizi, H. Sun, T. Liu, C. Raghavan, K. Elliott, M. Kardos, A. Schmitz, Y. Brown, M. Montes, M. Yung","doi":"10.1109/GAAS.1995.528954","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528954","url":null,"abstract":"Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabrication capability which is quite versatile in being able to produce digital, analog, mixed signal, and optoelectronic ICs within the same process. This enables the fab line to quickly respond to varying demands. Three ICs are discussed which exemplify the capability of this fab: (1) a 7 GHz 12-bit accumulator; (2) a nearly ideal continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator operating at a 3.2 GHz sample rate; and (3) a monolithic 4-channel optoelectronic receiver array capable of 20 Gb/s operation.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125878863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Gradual degradation under RF overdrive of MESFETs and PHEMTs 在射频过载下mesfet和phemt的逐渐退化
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528966
J.C.M. Hwang
{"title":"Gradual degradation under RF overdrive of MESFETs and PHEMTs","authors":"J.C.M. Hwang","doi":"10.1109/GAAS.1995.528966","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528966","url":null,"abstract":"This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133951857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
Managing high IC yields with short cycle times 以较短的周期时间管理高集成电路产量
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528975
S. Khetan, P. Fowler
{"title":"Managing high IC yields with short cycle times","authors":"S. Khetan, P. Fowler","doi":"10.1109/GAAS.1995.528975","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528975","url":null,"abstract":"High IC yields are the key to low product costs, essential for profitable pursuit of high volume GaAs IC markets for consumer applications. Short product development cycle times are essential for getting entry into such markets. Technology has been moving at a fast pace and product life cycles are getting shorter. Short development cycle times are needed not only to match the market window but also to assure reasonably long product life cycles. Short manufacturing cycle times not only help reduce development cycle times but also provide protection against potential inventory scrap due to short product life cycle times. Ideally, one would like to have them all-high yields, short development cycle times and short manufacturing cycle times. In a perfect world (and sometimes in the real world also), it might be possible to attain all.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131211810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 10 Gb/s ATM data synchroniser 10gb /s ATM数据同步器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528959
T.Y.K. Wong, J. Sitch, S. McGarry
{"title":"A 10 Gb/s ATM data synchroniser","authors":"T.Y.K. Wong, J. Sitch, S. McGarry","doi":"10.1109/GAAS.1995.528959","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528959","url":null,"abstract":"A data synchroniser based on an analog controlled data delay driven by a clock to data phase detector is reported. The synchroniser is fabricated in an HBT processes and runs at 10 Gb/s with 200 ps delay range.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132190212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3.4 V operation power amplifier multi-chip IC's for digital cellular phone 数字手机用3.4 V运算功率放大器多片集成电路
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528962
Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh
{"title":"3.4 V operation power amplifier multi-chip IC's for digital cellular phone","authors":"Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh","doi":"10.1109/GAAS.1995.528962","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528962","url":null,"abstract":"GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125759101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator 用于III-V Mach-Zehnder调制器的10gb /s AlGaAs/GaAs HBT高功率全差分限制分布式放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528994
T.Y.K. Wong, A. Freundorfer, B. Beggs, J. Sitch
{"title":"A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator","authors":"T.Y.K. Wong, A. Freundorfer, B. Beggs, J. Sitch","doi":"10.1109/GAAS.1995.528994","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528994","url":null,"abstract":"High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115351895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Low-noise mm-wave integrated InGaAs-based mixers 低噪声毫米波集成基于ingaas的混频器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529006
P. Marsh, K. Hong, D. Pavlidis
{"title":"Low-noise mm-wave integrated InGaAs-based mixers","authors":"P. Marsh, K. Hong, D. Pavlidis","doi":"10.1109/GAAS.1995.529006","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529006","url":null,"abstract":"Integrated InP-based mixers can benefit millimeter and submillimeter-wave receivers by their potential for low LO power requirements (P/sub LO/) and low noise performance. An InGaAs Schottky diode's low barrier (/spl phi//sub b//spl sim/0.25 eV) reduces the P/sub LO/ requirement but special fabrication techniques, covered here, are required to ensure Schottky quality. A quasi-optical, InGaAs integrated antenna-mixer was demonstrated at 90 GHz and obtained intrinsic noise and conversion loss performance on par with state-of-the-art planar GaAs mixer diodes. Furthermore, results indicate very low contributions of hot electron and other noise beyond shot and thermal noise. Since submillimeter mixer performance is often dominated by hot electron noise, these mixers should have potential for low-noise operation at and beyond millimeter and submillimeter frequencies.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115454175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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