高PAE伪晶InGaAs/AlGaAs HEMT x波段高功率放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529011

Y.C. Chen, C.S. Wu, C. Pao, M. Cole, Z. Bardai, L. Hou, T.A. Midford, T. Cisco

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引用次数: 16

摘要

设计并实现了0.25 /spl mu/m栅极InGaAs/AlGaAs伪晶HEMT制备高功率x波段单片放大器的系统实验。设计了材料结构和栅极凹槽工艺，在不牺牲增益和效率的情况下优化了器件击穿电压。在此基础上研制了两级大功率x波段单片放大器。当放大器工作在V/sub /=10 V时，在7至10 GHz频率范围内实现了9 W的输出功率。在8.5 GHz频率下，饱和输出功率峰值为10w，对应功率密度为1w /mm。当偏置为7 V时，放大器在8.5 GHz时产生6.7 W的峰值功率，相关功率增加效率为40%。

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High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers

A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered such that the device breakdown voltage was optimized without sacrificing gain and efficiency. A two-stage high power X-band monolithic amplifier based on the optimized device has been developed. When the amplifier was operated at V/sub ds/=10 V, an output power of 9 W was achieved across the 7 to 10 GHz frequency range. A peak saturated output power of 10 W, corresponding to a power density of 1 W/mm, occurred at 8.5 GHz. When biased at 7 V, the amplifier generated a peak power of 6.7 W with an associated power added efficiency of 40% at 8.5 GHz.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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