在射频过载下mesfet和phemt的逐渐退化

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528966

J.C.M. Hwang

{"title":"在射频过载下mesfet和phemt的逐渐退化","authors":"J.C.M. Hwang","doi":"10.1109/GAAS.1995.528966","DOIUrl":null,"url":null,"abstract":"This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":"{\"title\":\"Gradual degradation under RF overdrive of MESFETs and PHEMTs\",\"authors\":\"J.C.M. Hwang\",\"doi\":\"10.1109/GAAS.1995.528966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"30\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 30

摘要

本文基于对mesfet和phemt在射频过载下逐渐退化的一些参考研究的叙述总结和讨论。在介绍了问题产生的背景后，讨论了问题产生的机理、模型、分析以及可能的解决方案。

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Gradual degradation under RF overdrive of MESFETs and PHEMTs

This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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