Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh
{"title":"数字手机用3.4 V运算功率放大器多片集成电路","authors":"Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh","doi":"10.1109/GAAS.1995.528962","DOIUrl":null,"url":null,"abstract":"GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"3.4 V operation power amplifier multi-chip IC's for digital cellular phone\",\"authors\":\"Y. Hasegawa, Y. Ogata, I. Nagasako, K. Inosako, N. Iwata, M. Kanamori, T. Itoh\",\"doi\":\"10.1109/GAAS.1995.528962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3.4 V operation power amplifier multi-chip IC's for digital cellular phone
GaAs power multi-chip IC's (MCIC's) operating at 3.4 V for digital cellular phone have been successfully developed, employing a double-doped heterojunction FET (HJFET). The MCIC's can deliver an output power over 31.2 dBm with a power added efficiency of 45% in the frequency range from 940 to 956 MHz, and from 1429 to 1453 MHz, respectively. The MCIC's have low distortion characteristics, and the adjacent channel interference level of the /spl pi//4-shift QPSK modulation is -50 dBc at the 150 kHz apart from the center frequency. The package size is having a total volume of only 0.4 cc, half of 14.2/spl times/11.2/spl times/2.4 mm that for conventional power amplifier MCIC's. The MCIC's will contribute to realization of compact cellular phones.