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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995最新文献

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Large diameter III-V substrates-current issues and perspective 大直径III-V基板-当前问题和前景
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528974
S. Sawada, K. Oida, H. Miyajima, K. Nambu, R. Nakai, M. Tatsumi, K. Fujita, Y. Nishida
{"title":"Large diameter III-V substrates-current issues and perspective","authors":"S. Sawada, K. Oida, H. Miyajima, K. Nambu, R. Nakai, M. Tatsumi, K. Fujita, Y. Nishida","doi":"10.1109/GAAS.1995.528974","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528974","url":null,"abstract":"This paper presents prospects for the future market, availability and cost of 6 in. diam. GaAs substrates from a substrate supplier's point of view. Outlining the challenges to the substrate supplier, we discuss the current issues and the future potential of production technologies (crystal growth, annealing, and wafer processing) for 6 in. diam. GaAs substrates, and mention current issues for 3 in. diam. InP substrates. In addition, we introduce 6 in. diam. GaAs and 3 in. diam. InP crystals grown by the VCZ method, which is a promising technology for the production of large substrates for multimedia devices.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121083089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High power DPDT antenna switch MMIC for digital cellular systems 用于数字蜂窝系统的大功率DPDT天线开关MMIC
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528965
K. Kohama, T. Ohgihara, Y. Murakami
{"title":"High power DPDT antenna switch MMIC for digital cellular systems","authors":"K. Kohama, T. Ohgihara, Y. Murakami","doi":"10.1109/GAAS.1995.528965","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528965","url":null,"abstract":"In this paper, we propose two types of new DPDT switch GaAs JFET MMICs for digital cellular handsets. These ICs have excellent performances of low insertion loss and high power handling capability even with a low control voltage by stacking three JFETs with shallow Vp and using a novel bias circuit. One DPDT switch IC has two shunt FET blocks and can obtain high isolation without external parts. Insertion loss smaller than 0.6 dB and isolation over 25 dB up to 2 GHz were achieved. P1 dB was about 35 dBm even with the control voltage of 0/3 V. Another DPDT switch IC utilizes a parallel resonance of external inductor and parasitic capacitance between drain and source of OFF state FETs. By attaching 15 nH inductors, for example, the IC exhibited insertion loss as low as 0.4 dB and isolation of better than 40 dB at 1.5 GHz, and P1 dB was about 34 dBm with the 0/3 V control.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"66 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115675273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
The wireless communications market-is there a place for GaAs 无线通信市场有GaAs的一席之地
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528949
K. M. Baughan
{"title":"The wireless communications market-is there a place for GaAs","authors":"K. M. Baughan","doi":"10.1109/GAAS.1995.528949","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528949","url":null,"abstract":"The rapid growth of the mobile cellular telephone industry over the last few years has triggered an associated growth in wireless communications generally. This paper reviews the nature of the market, the key product focus areas and the opportunities for the competing high frequency semiconductor technologies, in particular GaAs.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126734706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 2.5 gb/s GaAs ATM Mux Demux ASIC 2.5 gb/s GaAs ATM Mux Demux ASIC
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528957
J. K. Madsen, P. Lassen
{"title":"A 2.5 gb/s GaAs ATM Mux Demux ASIC","authors":"J. K. Madsen, P. Lassen","doi":"10.1109/GAAS.1995.528957","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528957","url":null,"abstract":"This paper describes the design and implementation of a high speed GaAs ATM Mux Demur ASIC (AMDA) which is the key element in a high speed ATM Add-Drop unit. This unit is used in a new distributed ATM multiplexing-demultiplexing architecture for broadband switching systems. The Add-Drop unit provides a cell based interface between networks/systems operating at different data rates, the high speed interface being 2.5 Gb/s and the low speed interface being 155/622 Mb/s. Self-timed FIFOs are used for handling the speed gaps between domains operating at different clock rates, and a Self-Timed At Receiver's Input (STARI) interface is used at all high speed chip-to-chip links to eliminate timing skews The AMDA demonstrated operation above 4 Gb/s (500 MHz clock frequency) with an associated power dissipation of 5 W.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116867095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications 低成本线性AlGaAs/GaAs HBT MMIC功率放大器，具有有源偏置传感，适用于pc应用
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528963
Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller
{"title":"A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications","authors":"Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller","doi":"10.1109/GAAS.1995.528963","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528963","url":null,"abstract":"A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117073274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT 采用InGaP/InGaAs HEMT的60 ghz MMIC图像抑制下变频器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528999
T. Saito, N. Hidaka, K. Ono, Y. Ohashi, T. Shimura
{"title":"60-GHz MMIC image-rejection downconverter using InGaP/InGaAs HEMT","authors":"T. Saito, N. Hidaka, K. Ono, Y. Ohashi, T. Shimura","doi":"10.1109/GAAS.1995.528999","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528999","url":null,"abstract":"We have designed, fabricated, and evaluated an InGaP/InGaAs/GaAs HEMT 60-GHz monolithic image-rejection downconverter. The downconverter consists of a four-stage low-noise amplifier and a single-balanced image-rejection active-drain mixer. The HEMTs used in the downconverter have gates of 0.1 /spl mu/m long and 100 /spl mu/m wide. The downconverter has a maximum conversion gain of 22.9 dB at 61 GHz and a minimum noise figure of 3.16 dB at 58.5 GHz with 5 dBm LO power input and 140 MHz IF output. These characteristics are, to our knowledge, the best report of an MMIC downconverter using an image-rejection active-drain mixer in this frequency range. This is a significant improvement from our previous report results in terms of the noise figure and conversion gain.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115803046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Low power current mode multi-valued logic interconnect for high speed interchip communications 用于高速片间通信的低功率电流模式多值逻辑互连
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529022
J.Q. Zhang, S. Long, F.H. Ho, J. K. Madsen
{"title":"Low power current mode multi-valued logic interconnect for high speed interchip communications","authors":"J.Q. Zhang, S. Long, F.H. Ho, J. K. Madsen","doi":"10.1109/GAAS.1995.529022","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529022","url":null,"abstract":"A new GaAs current mode (CM) chip-to-chip interconnection circuit is presented that provides high signal transfer speed with a 50 /spl Omega/ active termination and reduced input voltage swing. The power dissipation is shown to be 1/8 of an ECL I/O. The ternary logic version of it can reduce wiring by half and eliminate clock skew problems while still keeping the low power dissipation.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126799340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Over-220-GHz-f/sub T/-and-f/sub max/ InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter 具有新型六角形发射极的超220 ghz -f/sub T/和f/sub max/ InP/InGaAs双异质结双极晶体管
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528985
S. Yamahata, K. Kurishima, H. Ito, Y. Matsuoka
{"title":"Over-220-GHz-f/sub T/-and-f/sub max/ InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter","authors":"S. Yamahata, K. Kurishima, H. Ito, Y. Matsuoka","doi":"10.1109/GAAS.1995.528985","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528985","url":null,"abstract":"Superior high-frequency characteristics with peak f/sub T/ of 228 GHz and f/sub max/ of 227 GHz are demonstrated for self-aligned InP/InGaAs DHBTs with a novel collector structure and a new hexagonal emitter geometry. These improvements in f/sub T/ and f/sub max/ are due to the thickness optimization of the base and collector layers and the reduction of parasitic base resistance and base/collector capacitance through the use of the new emitter geometry.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126041595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Mobile communications systems trend in Japan and device requirements 移动通信系统在日本的发展趋势和设备要求
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528950
M. Mitama
{"title":"Mobile communications systems trend in Japan and device requirements","authors":"M. Mitama","doi":"10.1109/GAAS.1995.528950","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528950","url":null,"abstract":"This paper describes the present status and trends of Japanese digital cellular and digital cordless telephone systems. The GaAs device requirements for these systems are presented.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"427 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134064697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The bootstrapped gate FET (BGFET)-a new control transistor 自启动栅场效应管(BGFET)是一种新型的控制晶体管
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528979
R. Bayruns, K. Li, D. Osika, D. Stofman, M. Shokrani, P. Fowler, E. Ham, J. Brand
{"title":"The bootstrapped gate FET (BGFET)-a new control transistor","authors":"R. Bayruns, K. Li, D. Osika, D. Stofman, M. Shokrani, P. Fowler, E. Ham, J. Brand","doi":"10.1109/GAAS.1995.528979","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528979","url":null,"abstract":"Si PIN diodes are used almost exclusively when low cost, low distortion variable attenuators are needed. PIN diodes can obtain an input third order intercept IIP3 of +20 to +40 dBm, but at the expense of complicated biasing and high current consumption. GaAs MESFETs used as attenuators require only a control voltage and are easily integrated into monolithic circuits. A major disadvantage of the GaAs MESFET is its high level of distortion. In a series attenuator configuration, a typical GaAs MESFET IIP3 is 0 dBm at 10 dB attenuation. Therefore, GaAs MESFETs are used only under very low level input signals. This precludes their use from most high volume applications such as cable television, DBS receivers and cellular telephones. We present a new transistor, a bootstrapped gate FET (BGFET) which provides about an approximate 20 dB improvement in distortion over a standard GaAs MESFET.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134423155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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