Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller
{"title":"低成本线性AlGaAs/GaAs HBT MMIC功率放大器,具有有源偏置传感,适用于pc应用","authors":"Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller","doi":"10.1109/GAAS.1995.528963","DOIUrl":null,"url":null,"abstract":"A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications\",\"authors\":\"Peter Walters, P. Lau, Klaus Buehring, James Penney, Craig Farley, Pat McDade, Ken Weller\",\"doi\":\"10.1109/GAAS.1995.528963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528963\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low cost linear AlGaAs/GaAs HBT MMIC power amplifier with active bias sensing for PCS applications
A dual RF input high linearity power amplifier for PCS bands from 1850 to 1910 MHz has been developed for TDMA/CDMA applications. It features on die, input switching, active bias sensing and regulation, 50/spl Omega/ input matching and power down control. A single positive supply voltage is required. This amplifier is packaged in a low cost plastic super small SSOP-16 package. In digital operation adjacent channel power rejection is better then 30 dBc at 800 mW and 22 dB of gain. Maximum output power is 2 W. Typical high power added efficiency (PAE) is 40%.