具有新型六角形发射极的超220 ghz -f/sub T/和f/sub max/ InP/InGaAs双异质结双极晶体管

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528985

S. Yamahata, K. Kurishima, H. Ito, Y. Matsuoka

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引用次数: 19

摘要

采用新型集电极结构和新型六角形发射极结构的自对准InP/InGaAs dhbt具有优异的高频特性，峰值f/sub T/为228 GHz，峰值f/sub max/为227 GHz。f/sub T/和f/sub max/的这些改进是由于基极和集电极层的厚度优化，以及通过使用新的发射极几何结构减少了寄生基极电阻和基极/集电极电容。

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Over-220-GHz-f/sub T/-and-f/sub max/ InP/InGaAs double-heterojunction bipolar transistors with a new hexagonal-shaped emitter

Superior high-frequency characteristics with peak f/sub T/ of 228 GHz and f/sub max/ of 227 GHz are demonstrated for self-aligned InP/InGaAs DHBTs with a novel collector structure and a new hexagonal emitter geometry. These improvements in f/sub T/ and f/sub max/ are due to the thickness optimization of the base and collector layers and the reduction of parasitic base resistance and base/collector capacitance through the use of the new emitter geometry.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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