大直径III-V基板-当前问题和前景

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528974

S. Sawada, K. Oida, H. Miyajima, K. Nambu, R. Nakai, M. Tatsumi, K. Fujita, Y. Nishida

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引用次数: 1

摘要

本文对6英寸的未来市场、可用性和成本进行了展望。从衬底供应商的角度来看，GaAs衬底的直径。概述了基板供应商面临的挑战，我们讨论了6英寸的当前问题和生产技术(晶体生长，退火和晶圆加工)的未来潜力。直径。GaAs衬底，并提及当前的问题为3英寸。InP底物。此外，我们还推出了6英寸。直径，GaAs和3英寸。通过VCZ方法生长的InP晶体是一种有前途的技术，用于生产多媒体设备的大型衬底。

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Large diameter III-V substrates-current issues and perspective

This paper presents prospects for the future market, availability and cost of 6 in. diam. GaAs substrates from a substrate supplier's point of view. Outlining the challenges to the substrate supplier, we discuss the current issues and the future potential of production technologies (crystal growth, annealing, and wafer processing) for 6 in. diam. GaAs substrates, and mention current issues for 3 in. diam. InP substrates. In addition, we introduce 6 in. diam. GaAs and 3 in. diam. InP crystals grown by the VCZ method, which is a promising technology for the production of large substrates for multimedia devices.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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