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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995最新文献

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MMIC-based W-band Dicke switched direct-detection receiver 基于mmic的w波段迪克开关直接探测接收机
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.529000
D. Lo, E. Lin, H. Wang, M. Biedenbender, R. Lai, G. Ng, G. Dow, B. Allen
{"title":"MMIC-based W-band Dicke switched direct-detection receiver","authors":"D. Lo, E. Lin, H. Wang, M. Biedenbender, R. Lai, G. Ng, G. Dow, B. Allen","doi":"10.1109/GAAS.1995.529000","DOIUrl":"https://doi.org/10.1109/GAAS.1995.529000","url":null,"abstract":"We have demonstrated a W-band Dicke switched direct-detection receiver based on advanced GaAs MMIC process technology. The receiver consists of two MMICs, a W-band six-stage balanced switching low noise amplifier and a unique W-band detector with vertical dot diode structure. The balanced switching low noise amplifier has achieved a gain of 37 dB from 90 to 95 GHz and an average isolation of 15 dB between on and off from 85 to 95 GHz. Based on hot/cold load calibration, the constructed Dicke switched direct-detection receiver has achieved a minimum resolvable temperature of 0.5 K with 10 ms integration at 50 KHz switching rate.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132271900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
PNP AlGaAs/GaAs HBT low noise amplifiers PNP AlGaAs/GaAs HBT低噪声放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI: 10.1109/GAAS.1995.528964
K. Kobayashi, L. Tran, T. Block, J. Cowles, A. Oki, D. Streit
{"title":"PNP AlGaAs/GaAs HBT low noise amplifiers","authors":"K. Kobayashi, L. Tran, T. Block, J. Cowles, A. Oki, D. Streit","doi":"10.1109/GAAS.1995.528964","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528964","url":null,"abstract":"This paper describes the performance of PNP AlGaAs/GaAs HBT-based low noise amplifiers. A 2 GHz narrow-band noise matched LNA achieves a min, NF=2.2 dB and an associated gain of 9.3 dB while consuming only 4 mW through a -2 V supply. A DC-4.5 GHz wideband direct-coupled LNA achieves 20 dB gain, and NFs of 2.0, 2.4, and 2.8 dB at 1, 2, and 4 GHz, respectively. The GaAs PNP HBTs of this work employ an exponentially graded base doping profile to enhance the device f/sub T/ and improve the high frequency NF performance. The resulting PNP HBT LNAs obtain noise figure-bandwidth performance which is better than Si-BJT LNAs, and comparable to NPN HBT LNAs for frequencies up to 4 GHz.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126981124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links 用于高并行光数据链路的低功耗、高速InGaAs/InP光接收器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-09-01 DOI: 10.1109/GAAS.1995.528989
M. L. Lovejoy, G. Patrizi, P. Enquist, B. H. Rose, D. Slater, R. Shul, R. F. Carson, D. Craft, D. Rieger, J. Hutchby
{"title":"Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links","authors":"M. L. Lovejoy, G. Patrizi, P. Enquist, B. H. Rose, D. Slater, R. Shul, R. F. Carson, D. Craft, D. Rieger, J. Hutchby","doi":"10.1109/GAAS.1995.528989","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528989","url":null,"abstract":"Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers are designed to operate from 980 nm to over 1.3 /spl mu/m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of /spl sim/10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124806256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High power AlGaAs/GaAs HBTs for Ka-band operation 用于ka波段工作的高功率AlGaAs/GaAs HBTs
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1900-01-01 DOI: 10.1109/GAAS.1995.528984
Chang-Woo Kim, S. Tanaka, Y. Amamiya, N. Furuhata, H. Shimawaki, Y. Miyoshi, N. Goto, K. Honjo
{"title":"High power AlGaAs/GaAs HBTs for Ka-band operation","authors":"Chang-Woo Kim, S. Tanaka, Y. Amamiya, N. Furuhata, H. Shimawaki, Y. Miyoshi, N. Goto, K. Honjo","doi":"10.1109/GAAS.1995.528984","DOIUrl":"https://doi.org/10.1109/GAAS.1995.528984","url":null,"abstract":"AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-/spl mu/m/sup 2/ emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-/spl mu/m/sup 2/ CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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