用于ka波段工作的高功率AlGaAs/GaAs HBTs

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1900-01-01 DOI:10.1109/GAAS.1995.528984

Chang-Woo Kim, S. Tanaka, Y. Amamiya, N. Furuhata, H. Shimawaki, Y. Miyoshi, N. Goto, K. Honjo

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引用次数: 5

摘要

在26ghz频段工作的AlGaAs/GaAs功率hbt已经开发出来。hbt的设计是为了提高热稳定性和功率增益。一个480-/spl mu/m/sup /发射极面积的共基HBT在26.85 GHz下实现了0.65 W的连续输出功率，集电极效率为34%，功率附加效率为16%，线性功率增益为6db。960-/spl mu/m/sup 2/ CB HBT在26.2 GHz时输出功率为0.8 W，线性功率增益为5.6 dB。

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High power AlGaAs/GaAs HBTs for Ka-band operation

AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-/spl mu/m/sup 2/ emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-/spl mu/m/sup 2/ CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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