PNP AlGaAs/GaAs HBT低噪声放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528964

K. Kobayashi, L. Tran, T. Block, J. Cowles, A. Oki, D. Streit

{"title":"PNP AlGaAs/GaAs HBT低噪声放大器","authors":"K. Kobayashi, L. Tran, T. Block, J. Cowles, A. Oki, D. Streit","doi":"10.1109/GAAS.1995.528964","DOIUrl":null,"url":null,"abstract":"This paper describes the performance of PNP AlGaAs/GaAs HBT-based low noise amplifiers. A 2 GHz narrow-band noise matched LNA achieves a min, NF=2.2 dB and an associated gain of 9.3 dB while consuming only 4 mW through a -2 V supply. A DC-4.5 GHz wideband direct-coupled LNA achieves 20 dB gain, and NFs of 2.0, 2.4, and 2.8 dB at 1, 2, and 4 GHz, respectively. The GaAs PNP HBTs of this work employ an exponentially graded base doping profile to enhance the device f/sub T/ and improve the high frequency NF performance. The resulting PNP HBT LNAs obtain noise figure-bandwidth performance which is better than Si-BJT LNAs, and comparable to NPN HBT LNAs for frequencies up to 4 GHz.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"PNP AlGaAs/GaAs HBT low noise amplifiers\",\"authors\":\"K. Kobayashi, L. Tran, T. Block, J. Cowles, A. Oki, D. Streit\",\"doi\":\"10.1109/GAAS.1995.528964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the performance of PNP AlGaAs/GaAs HBT-based low noise amplifiers. A 2 GHz narrow-band noise matched LNA achieves a min, NF=2.2 dB and an associated gain of 9.3 dB while consuming only 4 mW through a -2 V supply. A DC-4.5 GHz wideband direct-coupled LNA achieves 20 dB gain, and NFs of 2.0, 2.4, and 2.8 dB at 1, 2, and 4 GHz, respectively. The GaAs PNP HBTs of this work employ an exponentially graded base doping profile to enhance the device f/sub T/ and improve the high frequency NF performance. The resulting PNP HBT LNAs obtain noise figure-bandwidth performance which is better than Si-BJT LNAs, and comparable to NPN HBT LNAs for frequencies up to 4 GHz.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文介绍了基于PNP AlGaAs/GaAs hbts的低噪声放大器的性能。一个2ghz窄带噪声匹配的LNA在通过- 2v电源仅消耗4mw的情况下实现最小NF=2.2 dB和相关增益9.3 dB。DC-4.5 GHz宽带直接耦合LNA在1 GHz、2 GHz和4 GHz时的增益分别为20 dB, NFs分别为2.0、2.4和2.8 dB。本研究的GaAs PNP hbt采用指数级基掺杂谱来增强器件f/sub T/并改善高频NF性能。由此得到的PNP HBT LNAs获得了比Si-BJT LNAs更好的噪声数字带宽性能，并且在高达4 GHz的频率上与NPN HBT LNAs相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

PNP AlGaAs/GaAs HBT low noise amplifiers

This paper describes the performance of PNP AlGaAs/GaAs HBT-based low noise amplifiers. A 2 GHz narrow-band noise matched LNA achieves a min, NF=2.2 dB and an associated gain of 9.3 dB while consuming only 4 mW through a -2 V supply. A DC-4.5 GHz wideband direct-coupled LNA achieves 20 dB gain, and NFs of 2.0, 2.4, and 2.8 dB at 1, 2, and 4 GHz, respectively. The GaAs PNP HBTs of this work employ an exponentially graded base doping profile to enhance the device f/sub T/ and improve the high frequency NF performance. The resulting PNP HBT LNAs obtain noise figure-bandwidth performance which is better than Si-BJT LNAs, and comparable to NPN HBT LNAs for frequencies up to 4 GHz.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

自引率

0.00%

发文量