采用InP/InGaAs双异质结构双极晶体管技术实现的光/微波相互作用系统单片集成光接收器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528990

H. Kamitsuna, Y. Matsuoka, S. Yamahata, K. Kurishima

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引用次数: 9

摘要

本文首次提出了一种采用InP/InGaAs双异质结构双极晶体管(DHBT’s)和层制兼容三端双异质结构光电晶体管(DHPT’s)的单片集成长波光接收器，用于限带光/微波相互作用系统。由于采用光微波兼容的DHPT/DHBT组合和附加在DHPT基端的电感器，所开发的DHPT/DHBT光接收器在15.3 GHz时产生6.3 A/W的非常大的光响应。采用传统的MMIC设计技术设计了整个DHPT/DHBT光接收机，包括O/E转换部分，设计精度良好。

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A monolithically integrated photoreceiver realized by InP/InGaAs double-heterostructure bipolar transistor technologies for optical/microwave interaction systems

This paper presents, for the first time, a monolithically integrated long-wavelength photoreceiver that uses InP/InGaAs double-heterostructure bipolar transistors (DHBT's) and layer- and process-compatible three-terminal double-heterostructure phototransistors (DHPT's) for band-limited optical/microwave interaction systems. The developed DHPT/DHBT photoreceiver yields the very large photo-response of 6.3 A/W at 15.3 GHz due to the utilization of the opto-microwave compatible DHPT/DHBT combination and an inductor attached at the base terminal of the DHPT. The entire DHPT/DHBT photoreceiver, including the O/E conversion part, is designed using conventional MMIC design techniques, and good design accuracy is confirmed.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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