用于高速数字、模拟、混合信号和光电子集成电路的基于inp的HBT晶圆厂

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.528954

W. Stanchina, J. Jensen, R. Walden, M. Hafizi, H. Sun, T. Liu, C. Raghavan, K. Elliott, M. Kardos, A. Schmitz, Y. Brown, M. Montes, M. Yung

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引用次数: 43

摘要

利用磷化铟基异质结双极晶体管(hbt)的集成电路(ic)在过去几年中创造了许多速度和带宽记录。本文描述了HBT集成电路技术的扩展到集成电路制造能力，该能力在能够在同一过程中生产数字，模拟，混合信号和光电子集成电路方面非常通用。这使得生产线能够快速响应不同的需求。本文讨论了三种集成电路，它们体现了该晶圆厂的能力:(1)一个7 GHz的12位累加器;(2)近乎理想的连续时间采样二阶/spl Delta//spl Sigma/调制器，工作频率为3.2 GHz;(3) 20 Gb/s运行速度的单片4通道光电接收机阵列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs

Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabrication capability which is quite versatile in being able to produce digital, analog, mixed signal, and optoelectronic ICs within the same process. This enables the fab line to quickly respond to varying demands. Three ICs are discussed which exemplify the capability of this fab: (1) a 7 GHz 12-bit accumulator; (2) a nearly ideal continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator operating at a 3.2 GHz sample rate; and (3) a monolithic 4-channel optoelectronic receiver array capable of 20 Gb/s operation.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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