{"title":"Gradual degradation under RF overdrive of MESFETs and PHEMTs","authors":"J.C.M. Hwang","doi":"10.1109/GAAS.1995.528966","DOIUrl":null,"url":null,"abstract":"This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30
Abstract
This paper is based on a narrative summary and discussion of a number of referenced investigations concerning the gradual degradation under RF overdrive of MESFETs and PHEMTs. After introducing the background of the problem, its mechanism, models, analysis, as well as potential solutions are discussed.