{"title":"用于III-V Mach-Zehnder调制器的10gb /s AlGaAs/GaAs HBT高功率全差分限制分布式放大器","authors":"T.Y.K. Wong, A. Freundorfer, B. Beggs, J. Sitch","doi":"10.1109/GAAS.1995.528994","DOIUrl":null,"url":null,"abstract":"High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.","PeriodicalId":422183,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator\",\"authors\":\"T.Y.K. Wong, A. Freundorfer, B. Beggs, J. Sitch\",\"doi\":\"10.1109/GAAS.1995.528994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.\",\"PeriodicalId\":422183,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1995.528994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1995.528994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 10 Gb/s AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier for III-V Mach-Zehnder modulator
High power, high frequency linear distributed amplifiers are available commercially which provide single-ended drive capability from a single-ended source. The purpose of this paper is to present an AlGaAs/GaAs HBT high power fully-differential limiting distributed amplifier operating at 10 Gb/s. The amplifier is designed to drive a III-V Mach-Zehnder modulator also developed at Bell-Northern Research.