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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)最新文献

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The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow 低晶圆弓200mm Si(111)晶圆上的亚微米GaN HEMT器件
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421503
Chieh-Chih Huang, Zhihong Liu, Weichuan Xing, G. Ng, E. Fitzgerald, S. Chua
{"title":"The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow","authors":"Chieh-Chih Huang, Zhihong Liu, Weichuan Xing, G. Ng, E. Fitzgerald, S. Chua","doi":"10.1109/EDTM.2018.8421503","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421503","url":null,"abstract":"GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116300394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of Carrier Trapping and Its Impact on Switching Performance 载波陷波建模及其对交换性能的影响
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421460
M. Miura-Mattausch, H. Kikuchihara, D. Navarro, H. Mattausch
{"title":"Modeling of Carrier Trapping and Its Impact on Switching Performance","authors":"M. Miura-Mattausch, H. Kikuchihara, D. Navarro, H. Mattausch","doi":"10.1109/EDTM.2018.8421460","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421460","url":null,"abstract":"This investigation focusses on the effect of carrier-trapping on device characteristics. It is demonstrated that consideration of the trap density of states and the trap-time constant in the compact model is sufficient to reproduce the resulting effect on device characteristics both accurately and in a consistent way. With model-parameter extraction from conventional I-V measurements and device-switching characteristics, the carrier-trapping effect on circuit performance can also be predicted accurately. The long-term dynamic carrier-trapping increase can be investigated on the same platform through the use of the additional stress measurements.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116355665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Auger FET: a Novel Device Concept for Subthermal Switching 俄歇场效应管:亚热开关的新器件概念
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421442
J. Teherani
{"title":"The Auger FET: a Novel Device Concept for Subthermal Switching","authors":"J. Teherani","doi":"10.1109/EDTM.2018.8421442","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421442","url":null,"abstract":"The Auger FET device concept employs new device physics to achieve low-voltage, low-energy switching. The device operates on the principle of gate modulation of Auger generation across the effective band gap of a van der Waals heterostructure. The physics of Auger generation - in which a hot carrier collides and loses energy to create an electron-hole pair — enables a subthermal subthreshold swing as low as 30 mV/decade at room temperature.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116653359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Particle removal characteristics in liquid flow during wafer rotation 晶圆旋转过程中液体流动中的颗粒去除特性
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421465
N. Handa, Satomi Hamada, M. Imai, Y. Wada, Hiroshi Sobukawa, Hirokuni Hiyama, K. Amagai
{"title":"Particle removal characteristics in liquid flow during wafer rotation","authors":"N. Handa, Satomi Hamada, M. Imai, Y. Wada, Hiroshi Sobukawa, Hirokuni Hiyama, K. Amagai","doi":"10.1109/EDTM.2018.8421465","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421465","url":null,"abstract":"With the miniaturization of the semiconductor, the slurry size used in CMP process tends to become small, and it is demanded to clean wafer efficiently after CMP. Therefore characteristic of particle removal in the liquid flow on a rotating wafer is investigated using the pollution sample wafer with the silica particle. Furthermore, particle removal properties in the liquid flow on a rotating wafer is clarified by comparing it with the visualization image of the liquid flow on a rotating wafer.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115272318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Short Flow Characterization Vehicle (Test Chip) Usage in Advanced Technology Development and Yield Improvement 短流量表征工具(测试芯片)在先进技术开发和良率提高中的应用
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421446
T. Brożek
{"title":"Short Flow Characterization Vehicle (Test Chip) Usage in Advanced Technology Development and Yield Improvement","authors":"T. Brożek","doi":"10.1109/EDTM.2018.8421446","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421446","url":null,"abstract":"Short flow Characterization Vehicles® can be used at early development phase and offer short learning cycles. Their main usage is to support patterning scheme, validate and freeze design rules, identify and solve major integration and process issues. They have been proven to work for BEOL, FEOL, MOL, and for BEOL-integrated embedded memory elements.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon 埋藏外延插氧层抑制氧化增强硼在硅中的扩散
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421512
D. Connelly, R. Burton, N. Cody, P. Fastenko, M. Hytha, R. Stephenson, H. Takeuchi, R. Mears
{"title":"Suppressing Oxidation-Enhanced Diffusion of Boron via Buried Epitaxial Oxygen-Inserted Layers in Silicon","authors":"D. Connelly, R. Burton, N. Cody, P. Fastenko, M. Hytha, R. Stephenson, H. Takeuchi, R. Mears","doi":"10.1109/EDTM.2018.8421512","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421512","url":null,"abstract":"Oxygen-Inserted (OI) layers interposed between boron marker layers are shown to substantially retard diffusion in the lower marker. Simulation of these OI layers and their associated annihilation of interstitials reproduces the experimental results, demonstrating that OI layers effectively preserve boron gradients during oxidation. Integration into CMOS process improves device matching and drive current.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fast Defect Reduction to Enable Customer Yield Ramp 快速减少缺陷，实现客户产量斜坡
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421515
R. Mostovoy, S. Parikh
{"title":"Fast Defect Reduction to Enable Customer Yield Ramp","authors":"R. Mostovoy, S. Parikh","doi":"10.1109/EDTM.2018.8421515","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421515","url":null,"abstract":"Minimizing defects on production wafers is critical for fab yield ramp and high volume manufacturing. Understanding the defect reduction process is essential for successfully implementing and validating corrective measures. A structured approach to defect root cause identification and correction is essential for achieving increasingly smaller defects with technology scaling from 28nm planar to 7 nm FINFET and with increasing stacks of 3DNAND memory. Such an approach leverages a defect knowledge base, broad equipment design and process expertise, and proven best-known methods—in addition to state-of-the-art metrology, inspection, and analysis technologies.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"17 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116164581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy 基于构型各向异性纳米磁体自旋轨道转矩驱动磁化开关的多比特存储单元
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421415
S. Wasef, S. Amara, M. Alawein, H. Fariborzi
{"title":"Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy","authors":"S. Wasef, S. Amara, M. Alawein, H. Fariborzi","doi":"10.1109/EDTM.2018.8421415","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421415","url":null,"abstract":"In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni81Fe19 (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130652003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings FinFET中热载流子降解(HCD)的非普遍温度依赖性:新的观察和物理理解
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421469
Zhuoqing Yu, Runsheng Wang, P. Hao, Shaofeng Guo, P. Ren, Ru Huang
{"title":"Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings","authors":"Zhuoqing Yu, Runsheng Wang, P. Hao, Shaofeng Guo, P. Ren, Ru Huang","doi":"10.1109/EDTM.2018.8421469","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421469","url":null,"abstract":"The temperature dependence of hot carrier degradation (HCD) in FinFET is observed to vary with bias conditions, channel local temperature and degradation time. It is found that the total HCD consist of both contributions from interface traps and oxide traps, whose individual temperature behaviors are different. Therefore, the total HCD composition varies with different conditions causing nonuniversal temperature dependence of HCD. The understandings are helpful for the physical investigation and modeling of HCD in advanced FinFET Technology.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121536735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Synthesis and Characterization of Novel TMD: Rhenium Disulfide 新型TMD:二硫化铼的合成与表征
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421449
Michael D. Valentin, Alison Guan, A. Nguyen, I. Lu, Cindy S. Merida, Michael J. Gomez, M. Dubey, L. Bartels
{"title":"Synthesis and Characterization of Novel TMD: Rhenium Disulfide","authors":"Michael D. Valentin, Alison Guan, A. Nguyen, I. Lu, Cindy S. Merida, Michael J. Gomez, M. Dubey, L. Bartels","doi":"10.1109/EDTM.2018.8421449","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421449","url":null,"abstract":"Transition metal dichalcogenides (TMDs) are exciting new materials that have received much attention due to their semiconducting properties in the direct bandgap. Well-studied TMDs, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), exhibit a direct bandgap in the monolayer form, but an indirect bandgap in the bulk form. Rhenium disulfide (ReS2), on the other hand, is a new TMD that is unique in its ability to retain a direct bandgap independent of thickness. By using chemical vapor deposition (CVD), few-layer ReS2 is synthesized and characterized by optical methods such as Raman spectroscopy and photoluminescence. We also show characterization results for atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM), and electrical transport to determine thickness, crystallinity, homogeneity, and electrical characteristics for use in future flexible electronics.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132891371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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