快速减少缺陷,实现客户产量斜坡

R. Mostovoy, S. Parikh
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引用次数: 0

摘要

最小化生产晶圆上的缺陷是晶圆厂良率上升和大批量生产的关键。了解缺陷减少过程对于成功实施和确认纠正措施是必不可少的。随着技术从28nm平面扩展到7nm FINFET以及3DNAND存储器堆栈的增加,缺陷根源识别和纠正的结构化方法对于实现越来越小的缺陷至关重要。这种方法利用了缺陷知识库、广泛的设备设计和工艺专业知识,以及经过验证的最知名的方法——除了最先进的计量、检查和分析技术之外。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast Defect Reduction to Enable Customer Yield Ramp
Minimizing defects on production wafers is critical for fab yield ramp and high volume manufacturing. Understanding the defect reduction process is essential for successfully implementing and validating corrective measures. A structured approach to defect root cause identification and correction is essential for achieving increasingly smaller defects with technology scaling from 28nm planar to 7 nm FINFET and with increasing stacks of 3DNAND memory. Such an approach leverages a defect knowledge base, broad equipment design and process expertise, and proven best-known methods—in addition to state-of-the-art metrology, inspection, and analysis technologies.
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