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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)最新文献

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Steep Slope Transistors for Quantum Computing 用于量子计算的陡坡晶体管
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-31 DOI: 10.1109/EDTM.2018.8421422
A. Ionescu, T. Rosca, C. Alper
{"title":"Steep Slope Transistors for Quantum Computing","authors":"A. Ionescu, T. Rosca, C. Alper","doi":"10.1109/EDTM.2018.8421422","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421422","url":null,"abstract":"In this paper we will present and discuss the potential of steep slope transistors to serve at cryogenic temperature: (i) the electronic design that is needed for qubit error correction and/or interfacing and (ii) to serve as ultra-sensitive charge detectors and potentially replace single electron transistors and/or CMOS for certain electronic functions. We suggest that among the various categories of steep slope devices, the heterojunction tunnel FETs compatible with CMOS platforms form a class of device candidates capable to play an important role in the future quantum computing (QC) down to cryogenic temperatures. The paper will investigate and discuss the potential merits of these devices.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122394959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On the Dynamic characteristics of Ferroelectric and Paraelectric FETs 铁电和准电场效应管的动态特性研究
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-31 DOI: 10.1109/EDTM.2018.8421493
A.Sai Kumar, M. M. De Souza
{"title":"On the Dynamic characteristics of Ferroelectric and Paraelectric FETs","authors":"A.Sai Kumar, M. M. De Souza","doi":"10.1109/EDTM.2018.8421493","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421493","url":null,"abstract":"We derive the necessary conditions for a steep subthreshold switching of a Paraelectric FET with gate scan frequency. Despite an absence of a two-valley energy profile, paraelectric FETs can be represented by a series R-C circuit that exhibit sub-60 mV/dec switching under dynamic conditions during the reverse sweep of the gate bias.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134237928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Strategies for Growing Perovskite Films on Nanostructured TiO2 for High Performance Solar Cell 制备高性能太阳能电池用钙钛矿薄膜的研究
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421490
Changwen Liu, A. Ng, Z. Ren, P. W. Fong, Gang Li, C. Surya
{"title":"Strategies for Growing Perovskite Films on Nanostructured TiO2 for High Performance Solar Cell","authors":"Changwen Liu, A. Ng, Z. Ren, P. W. Fong, Gang Li, C. Surya","doi":"10.1109/EDTM.2018.8421490","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421490","url":null,"abstract":"The TiO2 nanorod array (TiO2-NA) acting as electron transport layer (ETL) is incorporated with the perovskite solar cells (PSCs). The composition of perovskite is carefully optimized to achieve uniform films on the nanostructured ETL. The concentration of chlorine (Cl) has huge impact on the morphology of the perovskite layer deposited on TiO2-NA. Meanwhile, the incorporation of TiO2-NA enhances the extraction efficiency of the carrier due to the increased charge extraction area in the solar cell devices.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125377649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe 使用GSG太赫兹探测器的InAs量子阱MOSHEMT太赫兹探测
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421467
E. Kume, H. Ishii, H. Hattori, W. Chang, Y. Mukai, M. Ogura, H. Kanaya, T. Asano, T. Maeda
{"title":"1.0 THz detection by InAs quantum-well MOSHEMT using GSG THz probe","authors":"E. Kume, H. Ishii, H. Hattori, W. Chang, Y. Mukai, M. Ogura, H. Kanaya, T. Asano, T. Maeda","doi":"10.1109/EDTM.2018.8421467","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421467","url":null,"abstract":"Terahertz wave of 1.0 THz using ground-signal-ground (GSG) THz probe was detected by InAs quantum-well (QW) MOSHEMT. The clear response curves were obtained by the detector of which DC source (ground) terminal unconnected to the ground line of GSG THz probe. The responsivity of 10,755 kV/W with lock-in amplifier gain was achieved and noise equivalent power (NEP) of 156 pW/Hz0.5 was estimated.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134599407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications 具有t形栅极和空气间隔的多晶硅tft在物联网应用中的射频优势
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421455
Z. Yang, Y. Huang, H. Lin, P. W. Li, K. M. Chen, G. Huang
{"title":"Radio-frequency Superiority of Poly-Si TFTs with T-Shaped Gate and Air Spacers for IoT Applications","authors":"Z. Yang, Y. Huang, H. Lin, P. W. Li, K. M. Chen, G. Huang","doi":"10.1109/EDTM.2018.8421455","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421455","url":null,"abstract":"We report the first of its kind, self-organized poly-Si TFT structure of T-shaped silicided gate, air-spacers, as well as silicided source/drain in a single etching process followed by Ni self-aligned silicidation (SALICIDE) process. Process-controlled tunability of the T-shaped gate length and sidewall air-spacers have been demonstrated, enabling a practically achievable core building block for high-performance radio-frequency (RF) poly-Si TFTs. Detailed structural and electrical properties of the T-gate poly-Si TFTs were assessed using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and gate resistance, sidewall capacitance, as well as dc and RF measurements. Notably, unity-gain frequency of 12.1 GHz is recorded for our T-gate poly-Si TFTs with channel length of 96 nm.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126712039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors 非晶铟锌钨氧化物薄膜晶体管的退火效应
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421476
Ruofan Fu, Jianwen Yang, Qun Zhang, Wei-Chiao Chang, Chien-Min Chang, Po-Tsun Liu, H. Shieh
{"title":"Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors","authors":"Ruofan Fu, Jianwen Yang, Qun Zhang, Wei-Chiao Chang, Chien-Min Chang, Po-Tsun Liu, H. Shieh","doi":"10.1109/EDTM.2018.8421476","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421476","url":null,"abstract":"Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm2/V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128612164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator 低热预算制备聚ge1 - xsnx薄膜热电发生器
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421488
Kouta Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, M. Kurosawa
{"title":"Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator","authors":"Kouta Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, M. Kurosawa","doi":"10.1109/EDTM.2018.8421488","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421488","url":null,"abstract":"We have investigated thermoelectric (TE) properties of poly-Ge}_{1-x}Sn}_{x} layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK−2m−1 were obtained for p- and n-type poly-Ge}_{1-x}Sn}_{x} layers, respectively. The Ge}_{1-x}Sn}_{x}-based TE generator has been firstly fabricated blow the process temperature of 300 °C.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124571083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A graphene platform on silicon for the Internet of Everything 万物互联的硅上石墨烯平台
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421464
N. Mishra, Sai Jiao, A. Mondal, Z. Khan, J. Boeckl, K. Gaskill, Ryan E. Brock, R. Dauskardt, F. Iacopi
{"title":"A graphene platform on silicon for the Internet of Everything","authors":"N. Mishra, Sai Jiao, A. Mondal, Z. Khan, J. Boeckl, K. Gaskill, Ryan E. Brock, R. Dauskardt, F. Iacopi","doi":"10.1109/EDTM.2018.8421464","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421464","url":null,"abstract":"We have pioneered a platform technology able to harness the properties of graphene directly from silicon carbide on silicon substrates for integrated on-chip or in-package applications, ranging from sensing and nanophotonics to integrated energy storage. The graphene synthesis is transfer-free and site-selective, leading to straightforward wafer-level fabrication and yielding sufficient adhesion for subsequent processing. This approach among others can pave the way towards miniaturized energy sources in SiP systems for smart nodes of the Internet of Everything.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133306749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface 表面原子无序对金属/SiGe界面费米能级钉钉的潜在影响
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421410
X. Luo, T. Nishimura, T. Yajima, A. Toriumi
{"title":"Potential Influence of Surface Atomic Disorder on Fermi-level Pinning at Metal/SiGe Interface","authors":"X. Luo, T. Nishimura, T. Yajima, A. Toriumi","doi":"10.1109/EDTM.2018.8421410","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421410","url":null,"abstract":"The Schottky barrier heights (SBH) at metal/n-Si0.55Ge0.45 Schottky interface are reported as a function of work function of metals. In comparison of the pinning strength with metal/Si and metal/Ge, the result shows that a large amount of disorders and defects on SiGe do not have a significant effect on the Fermi level pinning (FLP), which may suggest that the intrinsic instead of extrinsic mechanism should be considered for the dominant mechanism of Fermi level pinning not only at metal/SiGe but also at metal/Si and Ge systems.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":" 22","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133051239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory 氧化铪基铁电存储器中的准电-铁电跃迁
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI: 10.1109/EDTM.2018.8421478
C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng
{"title":"Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory","authors":"C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng","doi":"10.1109/EDTM.2018.8421478","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421478","url":null,"abstract":"In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122253195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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