用于量子计算的陡坡晶体管

A. Ionescu, T. Rosca, C. Alper
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引用次数: 1

摘要

在本文中,我们将介绍和讨论陡坡晶体管在低温下服务的潜力:(i)量子比特纠错和/或接口所需的电子设计;(ii)作为超灵敏电荷探测器,并有可能取代单电子晶体管和/或CMOS用于某些电子功能。我们认为,在各种陡坡器件中,与CMOS平台兼容的异质结隧道场效应管形成了一类候选器件,能够在未来的量子计算(QC)中发挥重要作用,直至低温。本文将调查和讨论这些器件的潜在优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Steep Slope Transistors for Quantum Computing
In this paper we will present and discuss the potential of steep slope transistors to serve at cryogenic temperature: (i) the electronic design that is needed for qubit error correction and/or interfacing and (ii) to serve as ultra-sensitive charge detectors and potentially replace single electron transistors and/or CMOS for certain electronic functions. We suggest that among the various categories of steep slope devices, the heterojunction tunnel FETs compatible with CMOS platforms form a class of device candidates capable to play an important role in the future quantum computing (QC) down to cryogenic temperatures. The paper will investigate and discuss the potential merits of these devices.
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