C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng
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Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory
In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.