Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Abstract

We have investigated thermoelectric (TE) properties of poly-Ge}_{1-x}Sn}_{x} layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK−2m−1 were obtained for p- and n-type poly-Ge}_{1-x}Sn}_{x} layers, respectively. The Ge}_{1-x}Sn}_{x}-based TE generator has been firstly fabricated blow the process temperature of 300 °C.