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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)最新文献

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The Analysis for OLED property of the devices with various aperture ratio by Impedance Spectroscopy 阻抗谱法分析不同孔径比器件的OLED特性
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421411
T. Naganuma, C. Ma, Tohru Sasaki, T. Uemura, M. Adachi
{"title":"The Analysis for OLED property of the devices with various aperture ratio by Impedance Spectroscopy","authors":"T. Naganuma, C. Ma, Tohru Sasaki, T. Uemura, M. Adachi","doi":"10.1109/EDTM.2018.8421411","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421411","url":null,"abstract":"We investigated the OLED device property with changing the aperture ratio of the device. From VIL and the impedance spectroscopy (IS) measurement, it is considered that the efficiency is influenced by the lateral leakage in the device of the less aperture ratio. Also, we clarified that the effect by the lateral leakage depends on the material composition.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130072370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal 利用金属后退火技术增强锗锡p沟道FinFET性能
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421413
D. Lei, K. Lee, Yi-Chiau Huang, Shuyu Bao, Wei Wang, S. Masudy‐Panah, S. Yadav, Annie Kumar, Yuan Dong, Yuye Kang, Shengqiang Xu, Ying Wu, C. S. Tan, X. Gong, Y. Yeo
{"title":"Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal","authors":"D. Lei, K. Lee, Yi-Chiau Huang, Shuyu Bao, Wei Wang, S. Masudy‐Panah, S. Yadav, Annie Kumar, Yuan Dong, Yuye Kang, Shengqiang Xu, Ying Wu, C. S. Tan, X. Gong, Y. Yeo","doi":"10.1109/EDTM.2018.8421413","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421413","url":null,"abstract":"The impact of post-metal annealing (PMA) on the electrical characteristics of GeSn p-FinFETs was investigated. PMA increased the on-state current (I_{ON}) and intrinsic transconductance (G_{m, int}), and reduced the subthreshold swing (S), due to improved gate stack quality. GeSn p-FinFETs with 400 °C PMA exhibit a high field hole mobility (μ_{eff}) of 295 cm<sup>2</sup>/V·s at inversion carrier density N_{inv} of 8times 10^{12} cm<sup>2</sup>/V·s. This is among the highest μ_{eff} achieved for Ge-based p-FinFETs.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"604 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123240856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach 基于多尺度建模方法的电子封装元件界面失效表征
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421434
Z. Cui, Yingying Zhang, Qun Yang, Guoqi Zhang, Xianping Chen
{"title":"Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach","authors":"Z. Cui, Yingying Zhang, Qun Yang, Guoqi Zhang, Xianping Chen","doi":"10.1109/EDTM.2018.8421434","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421434","url":null,"abstract":"Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124699727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of 1μ m TSV via-last integration on electrical performance of advanced FinFET devices 1μ m TSV过端集成对先进FinFET器件电气性能的影响
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421473
G. Hiblot, S. Van Huylenbroeck, G. van der Plas, B. de Wachter, A. Chasin, B. Kaczer, T. Chiarella, J. Mitard, Steven De Muynck, G. Beyer, E. Beyne
{"title":"Impact of 1μ m TSV via-last integration on electrical performance of advanced FinFET devices","authors":"G. Hiblot, S. Van Huylenbroeck, G. van der Plas, B. de Wachter, A. Chasin, B. Kaczer, T. Chiarella, J. Mitard, Steven De Muynck, G. Beyer, E. Beyne","doi":"10.1109/EDTM.2018.8421473","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421473","url":null,"abstract":"In this work, the impact of 1times 5μm} Via-last integration on an advanced bulk FinFET technology is investigated. We find that mechanical impact of TSV proximity is below detection limit, however plasma-induced damage (PID) is observed on small devices (high antenna aspect ratio). Finally, a back-side anneal raising the TSV thermal budget shows no increase of mechanical impact though it partially cures PID damage on small devices.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125027850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Understanding the impact of High-k Post Deposition Anneal Temperature on FinFET Reliability – Trade-offs, optimization and mitigation 了解高k沉积后退火温度对FinFET可靠性的影响-权衡，优化和缓解
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421480
P. Srinivasan, R. Ranjan, S. Cimino, B. Kannan, M. Zhu
{"title":"Understanding the impact of High-k Post Deposition Anneal Temperature on FinFET Reliability – Trade-offs, optimization and mitigation","authors":"P. Srinivasan, R. Ranjan, S. Cimino, B. Kannan, M. Zhu","doi":"10.1109/EDTM.2018.8421480","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421480","url":null,"abstract":"The impact of high-k (HK) PDA anneal temperature (T) on FinFET reliability is studied comprehensively. Reducing the anneal temperature improves performance, but degrades BTI, HCI and TDDB. For BTI, the prefactor increases and voltage acceleration reduces for lower temperature, while time slopes remain unchanged. Reducing anneal temperature increases charge trapping behavior. For TDDB, voltage acceleration shows weak modulation to anneal temperature. HCI degrades due to lower anneal temperature for PFET. The underlying physical mechanism is correlated to IL thickness and HK crystallinity. Mitigation by post gate stack thermal budget optimization is presented.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127405509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Body Bias Dependence of Hot Carrier Degradation (HCD) in Advanced FinFET Technology 先进FinFET技术中热载流子降解(HCD)的体偏置依赖性
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421470
Jiayang Zhang, Zixuan Sun, Runsheng Wang, Zhuoqing Yu, P. Ren, Ru Huang
{"title":"Body Bias Dependence of Hot Carrier Degradation (HCD) in Advanced FinFET Technology","authors":"Jiayang Zhang, Zixuan Sun, Runsheng Wang, Zhuoqing Yu, P. Ren, Ru Huang","doi":"10.1109/EDTM.2018.8421470","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421470","url":null,"abstract":"In this paper, the impact of body bias on hot carrier degradation (HCD) in advanced FinFET devices is experimentally investigated. It is observed that the degradation of Idsat is increasing with body bias for the short-channel core devices, while an opposite tendency is found in the long-channel IO devices. The different dependences are found due to the mechanisms of the single-carrier event (SCE) in short-channel devices but the multi-carrier event (MVE) in long-channel devices. The results are helpful for the physical understanding of HCD in FinFET devices.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121787725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms 基于纳米CMOS平台的可编程势垒嵌入式可调谐近红外传感器
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421500
Zih-Hong Chen, Chien-Ping Wang, Po-Hsiang Huang, Y. Chih, Jonathan Chang, C. Lin, Y. King
{"title":"Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms","authors":"Zih-Hong Chen, Chien-Ping Wang, Po-Hsiang Huang, Y. Chih, Jonathan Chang, C. Lin, Y. King","doi":"10.1109/EDTM.2018.8421500","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421500","url":null,"abstract":"A novel near-infrared sensor implemented by nano-scaled CMOS technologies is proposed and demonstrated. This NIR sensing device consists of a gateless device, enabling light penetration into the channel region with tunable surface potential. With adjustable channel barrier, this near-IR sensor also features full compatibility to CMOS processes as well as a dynamic responsivity with the capability of extending its sensing range up to 60dB.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115001990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect 铜锥插入CBRAM器件的制备及其场集中效应下开关可靠性的提高
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421459
H. Kim, T. Park, K. J. Yoon, G. Kim, T. J. Ha, S. Kim, C. Hwang
{"title":"Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect","authors":"H. Kim, T. Park, K. J. Yoon, G. Kim, T. J. Ha, S. Kim, C. Hwang","doi":"10.1109/EDTM.2018.8421459","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421459","url":null,"abstract":"To supplement resistor fail of conduction bridge random access memory (CBRAM), various device fabrication methods have been suggested such as exploiting metal alloy as a cation supply layer or electrode [1]–[2], cation doped electrolyte [3]–[4], and confining cation injection with inserted buffer layer [5]–[6]. In this work, Cu cone structure embedded CBRAM device is suggested for improving switching reliability and uniformity. Along with cone structure fabrication method through wet etching, reliability improvement induced by field concentration is included.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133274723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quadrupole-electrode-integrated micropores for selective single-particle detections 选择性单粒子检测的四极电极集成微孔
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421447
Tomoki Hayashida, T. Ohshiro, M. Tsutsui, M. Taniguchi
{"title":"Quadrupole-electrode-integrated micropores for selective single-particle detections","authors":"Tomoki Hayashida, T. Ohshiro, M. Tsutsui, M. Taniguchi","doi":"10.1109/EDTM.2018.8421447","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421447","url":null,"abstract":"We fabricated a quadrupole-electrode-embedded micopore in a thin SiN membrane on a Si wafer. We demonstrated single-particle manipulation via a dielectrophoretic control through applying AC voltage to the electrodes to move only specific analytes to approach the pore. This manipulation-assisted sensor approach can be used for selective detections of specific analytes in biological samples by repelling oversized impurity particles through the dielectrophoretic mechanism whereby opening venues toward clinical use of nanopore technologies.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116633180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HAXPES evaluation of ferroelectric HfSiO MIM capacitor 铁电HfSiO MIM电容器HAXPES评价
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421471
K. Usuda, Y. Kamimuta, S. Kabuyanagi, M. Yoshiki, M. Tomita, M. Saitoh
{"title":"HAXPES evaluation of ferroelectric HfSiO MIM capacitor","authors":"K. Usuda, Y. Kamimuta, S. Kabuyanagi, M. Yoshiki, M. Tomita, M. Saitoh","doi":"10.1109/EDTM.2018.8421471","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421471","url":null,"abstract":"We present direct evaluation of a buried ferroelectric HfSiO layer beneath a top TiN electrode with MIM capacitor structure. Since inelastic mean free path for HAXPES is several times deeper than that for conventional XPS, we clearly measured Hf4f spectrum of HfSiO and revealed that chemical bonding state varied after thermal annealing of the HfSiO for crystallization. The method provides powerful assistance for such process optimization.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134238322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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