基于纳米CMOS平台的可编程势垒嵌入式可调谐近红外传感器

Zih-Hong Chen, Chien-Ping Wang, Po-Hsiang Huang, Y. Chih, Jonathan Chang, C. Lin, Y. King
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引用次数: 1

摘要

提出并演示了一种采用纳米级CMOS技术实现的新型近红外传感器。该近红外传感装置由一个无门器件组成,使光穿透到具有可调表面电位的通道区域。该近红外传感器具有可调通道屏障,与CMOS工艺完全兼容,并具有动态响应能力,可将其传感范围扩展到60dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms
A novel near-infrared sensor implemented by nano-scaled CMOS technologies is proposed and demonstrated. This NIR sensing device consists of a gateless device, enabling light penetration into the channel region with tunable surface potential. With adjustable channel barrier, this near-IR sensor also features full compatibility to CMOS processes as well as a dynamic responsivity with the capability of extending its sensing range up to 60dB.
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