Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421413

D. Lei, K. Lee, Yi-Chiau Huang, Shuyu Bao, Wei Wang, S. Masudy‐Panah, S. Yadav, Annie Kumar, Yuan Dong, Yuye Kang, Shengqiang Xu, Ying Wu, C. S. Tan, X. Gong, Y. Yeo

引用次数: 1

Abstract

The impact of post-metal annealing (PMA) on the electrical characteristics of GeSn p-FinFETs was investigated. PMA increased the on-state current (I_{ON}) and intrinsic transconductance (G_{m,\ int}), and reduced the subthreshold swing (S), due to improved gate stack quality. GeSn p-FinFETs with 400 °C PMA exhibit a high field hole mobility (μ_{eff}) of 295 cm²/V·s at inversion carrier density N_{inv} of 8\times 10^{12} cm²/V·s. This is among the highest μ_{eff} achieved for Ge-based p-FinFETs.

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利用金属后退火技术增强锗锡p沟道FinFET性能

研究了金属后退火(PMA)对GeSn p- finfet电特性的影响。PMA增加了导通电流(I_{ON})和本征跨导(G_{m，\ int})，由于栅极堆叠质量的提高，降低了亚阈值摆幅(S)。400°C PMA的GeSn p- finfet在反转载流子密度N_{inv}为8\ × 10^{12} cm2/V·s时表现出295 cm2/V·s的高场空穴迁移率(μ_{eff})。这是基于锗的p- finfet达到的最高μ_{eff}之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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