G. Hiblot, S. Van Huylenbroeck, G. van der Plas, B. de Wachter, A. Chasin, B. Kaczer, T. Chiarella, J. Mitard, Steven De Muynck, G. Beyer, E. Beyne
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Impact of 1μ m TSV via-last integration on electrical performance of advanced FinFET devices
In this work, the impact of 1\times 5μm} Via-last integration on an advanced bulk FinFET technology is investigated. We find that mechanical impact of TSV proximity is below detection limit, however plasma-induced damage (PID) is observed on small devices (high antenna aspect ratio). Finally, a back-side anneal raising the TSV thermal budget shows no increase of mechanical impact though it partially cures PID damage on small devices.
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