HAXPES evaluation of ferroelectric HfSiO MIM capacitor

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421471

K. Usuda, Y. Kamimuta, S. Kabuyanagi, M. Yoshiki, M. Tomita, M. Saitoh

引用次数: 0

Abstract

We present direct evaluation of a buried ferroelectric HfSiO layer beneath a top TiN electrode with MIM capacitor structure. Since inelastic mean free path for HAXPES is several times deeper than that for conventional XPS, we clearly measured Hf4f spectrum of HfSiO and revealed that chemical bonding state varied after thermal annealing of the HfSiO for crystallization. The method provides powerful assistance for such process optimization.

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铁电HfSiO MIM电容器HAXPES评价

我们提出了一种具有MIM电容器结构的顶部TiN电极下埋藏的铁电HfSiO层的直接评价。由于HAXPES的非弹性平均自由程比传统的XPS深几倍，我们清晰地测量了HfSiO的Hf4f光谱，并揭示了HfSiO在热处理结晶后化学键态的变化。该方法为工艺优化提供了有力的辅助。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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