Body Bias Dependence of Hot Carrier Degradation (HCD) in Advanced FinFET Technology

Abstract

In this paper, the impact of body bias on hot carrier degradation (HCD) in advanced FinFET devices is experimentally investigated. It is observed that the degradation of Idsat is increasing with body bias for the short-channel core devices, while an opposite tendency is found in the long-channel IO devices. The different dependences are found due to the mechanisms of the single-carrier event (SCE) in short-channel devices but the multi-carrier event (MVE) in long-channel devices. The results are helpful for the physical understanding of HCD in FinFET devices.