Embedded Tunable Near Infrared Sensor with Programmable Potential Barrier on Nano-meter CMOS Platforms

Abstract

A novel near-infrared sensor implemented by nano-scaled CMOS technologies is proposed and demonstrated. This NIR sensing device consists of a gateless device, enabling light penetration into the channel region with tunable surface potential. With adjustable channel barrier, this near-IR sensor also features full compatibility to CMOS processes as well as a dynamic responsivity with the capability of extending its sensing range up to 60dB.